march 2009 rev 1 1/10 10 STN851-A low voltage fast-switching npn power transistor features aec q101 compliant very low collector to em itter saturation voltage high current gain characteristic fast-switching speed surface-mounting sot-223 power package in tape and reel applications high efficiency low voltage switching applications description the device is manufactured in planar technology with "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. figure 1. internal schematic diagram sot-223 1 2 4 3 table 1. device summary order code marking package packaging STN851-A n851 sot-223 tape and reel www.st.com
electrical ratings STN851-A 2/10 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 150 v v ceo collector-emitter voltage (i b = 0) 60 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 5 a i cm collector peak current (t p < 5 ms) 10 a i b base current 1 a i bm base peak current (t p < 5 ms) 2 a p tot total dissipation at t amb = 25 c 1.6 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-amb thermal resistance junction-ambient (1) 1. device mounted on a p.c.b. area of 1 cm 2 78 c/w
STN851-A electrical characteristics 3/10 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. electrical characteristics symbol parameter test cond itions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 120 v v cb = 120 v t c = 100 o c 50 1 na a i ebo emitter cut-off current (i c = 0) v eb = 7 v 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 150 v v (br)ceo (1) 1. pulse duration = 300 s, duty cycle 1.5% collector-emitter breakdown voltage (i b = 0) i c = 10 ma 60 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 7 v v ce(sat) (1) collector-emitter saturation voltage i c = 100 ma i b = 5 ma i c = 1 a _ _ i b = 50 ma i c = 2 a i b = 50 ma i c = 5 a _ _ i b = 200 ma 10 70 140 320 50 120 250 500 mv mv mv mv v be(sat) (1) base-emitter saturation voltage i c = 4 a _ _ i b = 200 ma 1 1.15 v v be(on) (1) base-emitter on voltage i c = 4 a _ _ v ce = 1 v 0.89 1 v h fe (1) dc current gain i c = 10 ma v ce = 1 v i c = 2 a _ _ v ce = 1 v i c = 5 a v ce = 1 v i c = 10 a _ v ce = 1 v 150 150 90 30 300 270 140 50 350 f t transition frequency v ce = 10 v i c = 100 ma 130 mhz c cbo collector-base capacitance (i e = 0) v cb = 10 v f = 1 mhz 50 pf t on t s t f resistive load turn-on time storage time fall time i c = 1 a v cc = 10 v i b1 = -i b2 = 0.1 a 50 1.35 120 ns s ns
electrical characteristics STN851-A 4/10 2.1 electrical characteristics (curves) figure 2. derating curve figure 3. dc current gain figure 4. collector-emitter saturation voltage figure 5. collector-emitter saturation voltage figure 6. base-emitter saturation voltage figure 7. base-emitter on voltage
STN851-A electrical characteristics 5/10 figure 8. resistive load switching time figure 9. resistive load switching time figure 10. resistive load switching time figure 11. inductive load switching time figure 12. inductive load switching time
electrical characteristics STN851-A 6/10 2.2 test circuit figure 13. resistive load switching test circuit 1) fast electronic switch 2) non-inductive resistor
STN851-A package mechanical data 7/10 3 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and products status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STN851-A 8/10 dim. mm. min. typ max. a 1. 8 0 a1 0.02 0.1 b 0.60 0.70 0. 8 5 b1 2.90 3 .00 3 .15 c 0.24 0.26 0. 3 5 d6. 3 0 6.50 6.70 e2. 3 0 e1 4.60 e 3 . 3 0 3 .50 3 .70 h 6.70 7.00 7. 3 0 v 10 o s ot-22 3 mechanical data 0046067_l
STN851-A revision history 9/10 4 revision history table 5. document revision history date revision changes 16-mar-2009 1 first issue
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